Deterioration of near-UV GaN-based LEDs in seawater vapour

Design and Performance of Nitride-based UV LEDs

In this paper, we overview several of the critical materials growth, design and performance issues for nitride-based UV (< 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent l]ilotoiull~inesccncc studies of various IJV active regions. These studies demonstrate enhanced optical efficiencies for active regions with Incontaining alloys ( InGrN, AIInGa...

Maskless photolithography using UV LEDs.

A UV light emitting diode (LED) with a maximum output of 372 nm was collimated using a pinhole and a small plastic tube and focused using a microscope objective onto a substrate for direct lithographic patterning of the photoresist. Movement of the substrate with a motorised linear stage (syringe pump) allowed lines in SU-8 to be pattered with a width down to 35 microm at a linear velocity of 8...

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

Green LEDs: The case for cubic GaN

Green LEDs formed from cubic GaN can have lower Auger losses, higher hole carrier mobility, greater optical gain and increased p-doping efficiency BY CAN BAYRAM FROM THE UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN The revolution in solid-state lighting is well underway. LEDs bulbs are now shipping in significant volumes, thanks to price tags that are far more competitive than they were just a fe...

ZnO Nanowire/p-GaN Heterojunction LEDs

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...